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ti provides technical and reliability data (including datasheets), design resources (including reference designs), application or other design advice, web tools, safety information, and other resources “as is” and with all faults, and disclaims all warranties, express and implied, including without limitation any www.jj-electronic.sk 5 ECC81 A. F. DOUBLETRIODE Base: NOVAL U f = 6,3 or 12,6 V I f = 300 or 150 mA Typical characteristic: U a = 250 V I a = 10 mA U g = -2 V S = 5,5 mA/V µ =60 R i =11 kΩ ... Semiconductor Group 8 Introduction 1 Introduction The SAB 80C517/80C537 is a high-end microcontroller in the Siemens SAB 8051 8-bit microcontroller family. lt is based on the well-known industry standard 8051 architecture; a great

Rev. A/AH BC807-16/BC807-25/BC807-40 SMD General Purpose Transistor (PNP) www.taitroncomponents.com Page 2 of 5 Electrical Characteristics (T Ambient=25ºC unless noted otherwise) The G5316 is intended for DDR2, DDR3 and DDR3L memory systems. It integrates a synchronous buck PWM controller with a 2-A sink-source linear regulator and buffered reference. The PWM controller uses constant on-time control scheme to handle wide input/output voltage ratios with ease and provides 100ns “instant-on” response to UNISONIC TECHNOLOGIES CO., LTD 3 of 9 www.unisonic.com.tw QW-R502-088.J ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current ID 50 A Pulsed Drain Current (Note 2) IDM 150 A Avalanche Energy Single Pulsed (Note 3) EAS 205 mJ

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Title: 5965 6146 Author: Brimar Subject: DPo-FP-2006-04-22 Created Date: 4/22/2006 11:49:49 AM Tube 25C5 or Röhre 25C5 ID3802, Beam Power Tube, Miniatur-7-Pin-Base B7G, USA 1940 and shown. Radio tubes are valves.

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FQPF8N60C Datasheet (PDF) 1.1. fqpf8n60ct fqpf8n60cydtu.pdf Size:925K _fairchild_semi ® QFET FQP8N60C/FQPF8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 7.5A, 600V, RDS(on) = 1.2Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 28 nC) planar stripe, DMOS technology IS62C256-70W from Integrated Silicon Solution, Inc.. Find the PDF Datasheet, Specifications and Distributor Information. '2004 Fairchild Semiconductor Corporation Rev. B, March 2004 FQP8N60C/FQPF8N60C QFET® FQP8N60C/FQPF8N60C 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect STD5N52U, STF5N52U N-channel 525 V, 1.25 Ω typ., 4.4 A UltraFASTmesh™ Power MOSFETs in DPAK and TO-220FP packages Datasheet - production data Features TAB 3 1 DPAK 3 2 1 TO-220FP Figure 1.

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MPC5744P Data Sheet 32-bit MCU suitable for ISO26262 ASIL-D chassis and safety applications Features • The MPC5744P microcontroller is based on the Power Architecture® developed by NXP. It targets chassis and safety applications and other applications requiring a high Automotive Safety Integrity Level (ASIL). The MPC5744P is a SafeAssure ... Title: 5965 6146 Author: Brimar Subject: DPo-FP-2006-04-22 Created Date: 4/22/2006 11:49:49 AM

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Compare pricing for Molex 52559-1252 across 33 distributors and discover alternative parts, CAD models, technical specifications, datasheets, and more on Octopart. 5C3S Double-anode Rectifier . Name Type Application Cathode type Envelope Mass,g Filament voltage,V Filament current,A Anode voltage,V Anode current,A Socket type Max.reverse anode voltage,kV. 5C3S double-anode rectifier alternative current rectification oxide,direct UNISONIC TECHNOLOGIES CO., LTD 3 of 9 www.unisonic.com.tw QW-R502-088.J ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current ID 50 A Pulsed Drain Current (Note 2) IDM 150 A Avalanche Energy Single Pulsed (Note 3) EAS 205 mJ IS62C256-70W from Integrated Silicon Solution, Inc.. Find the PDF Datasheet, Specifications and Distributor Information. Title: 12AY7 Author: General Electric Subject: JA-FP-2001-12-01 Created Date: 12/1/2001 5:33:00 PM FQP47P06 MOSFET P-CH 60V 47A TO-220 Fairchild Semiconductor datasheet pdf data sheet FREE from datasheetz.com Datasheet (data sheet) search for integrated circuits (ic), semiconductors and other electronic components such as resistors, capacitors, transistors and diodes.

FQPF8N60C Datasheet (PDF) 1.1. fqpf8n60ct fqpf8n60cydtu.pdf Size:925K _fairchild_semi ® QFET FQP8N60C/FQPF8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 7.5A, 600V, RDS(on) = 1.2Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 28 nC) planar stripe, DMOS technology Title: 12AY7 Author: General Electric Subject: JA-FP-2001-12-01 Created Date: 12/1/2001 5:33:00 PM 28C256 datasheet, cross reference, circuit and application notes in pdf format. C114 Datasheet, C114 PDF, C114 Data sheet, C114 manual, C114 pdf, C114, datenblatt, Electronics C114, alldatasheet, free, datasheet, Datasheets, data sheet, datas ... page6/9 version 18/04/07 Health and safety The epoxy resins can be used safely, by respecting certain rules and precautions. The mix resin / hardener is corrosive and can irritate, by contact with the skin, or the eyes. Tube 25C5 or Röhre 25C5 ID3802, Beam Power Tube, Miniatur-7-Pin-Base B7G, USA 1940 and shown. Radio tubes are valves.

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Take advantage of the huge benefits of shopping by credit card, safe, convenient and reliable. Credit Card minimum order is AUD$ 20.00 USD$ 20.00 APPROX excluding freight and GST. ACTIVE COMPONENTS PASSIVE COMPONENTS Oct 30, 2015 · COO765RT Datasheet PDF Download Other data sheets within the file : 0765RT, C00565RT, C00765RT, C00965RT, C01265RT This entry was posted in Fairchild and tagged Green , power , Switch .

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STD5N52U, STF5N52U N-channel 525 V, 1.25 Ω typ., 4.4 A UltraFASTmesh™ Power MOSFETs in DPAK and TO-220FP packages Datasheet - production data Features TAB 3 1 DPAK 3 2 1 TO-220FP Figure 1.
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ST95P08. The chip is selected by a high to low transition on the S pin when C is at ’0’ state. At any time, the chip is deselected by a low to high transi-tion on the S pin when C is at ’0’ state. As soon as the chip is deselected, the Q pin is at high imped-ance state. This pin allows multiple ST95P08 to share the same SPI bus.

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The ride of the valkyries sheet musicAsian cup australia 2015 wiki.Zn1034e datasheet 555Michael flatley riverdance flute sheetUNISONIC TECHNOLOGIES CO., LTD 3 of 9 www.unisonic.com.tw QW-R502-088.J ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current ID 50 A Pulsed Drain Current (Note 2) IDM 150 A Avalanche Energy Single Pulsed (Note 3) EAS 205 mJ The G5316 is intended for DDR2, DDR3 and DDR3L memory systems. It integrates a synchronous buck PWM controller with a 2-A sink-source linear regulator and buffered reference. The PWM controller uses constant on-time control scheme to handle wide input/output voltage ratios with ease and provides 100ns “instant-on” response to

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Bold designators are close or identical, Italic designators are different ratings, different pinouts or different filament voltages. Please see the substitutes at the top of the page for more details The G5316 is intended for DDR2, DDR3 and DDR3L memory systems. It integrates a synchronous buck PWM controller with a 2-A sink-source linear regulator and buffered reference. The PWM controller uses constant on-time control scheme to handle wide input/output voltage ratios with ease and provides 100ns “instant-on” response to TPS65217C Single-Chip PMIC For Battery-Powered Systems The TPS65217 is a single chip power management IC specifically designed to support the AM335x series of application processors in portable and 5-V, non-portable .

  • UNISONIC TECHNOLOGIES CO., LTD 3 of 9 www.unisonic.com.tw QW-R502-088.J ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current ID 50 A Pulsed Drain Current (Note 2) IDM 150 A Avalanche Energy Single Pulsed (Note 3) EAS 205 mJ MPC5744P Data Sheet 32-bit MCU suitable for ISO26262 ASIL-D chassis and safety applications Features • The MPC5744P microcontroller is based on the Power Architecture® developed by NXP. It targets chassis and safety applications and other applications requiring a high Automotive Safety Integrity Level (ASIL). The MPC5744P is a SafeAssure ... Bold designators are close or identical, Italic designators are different ratings, different pinouts or different filament voltages. Please see the substitutes at the top of the page for more details Semiconductor Group 8 Introduction 1 Introduction The SAB 80C517/80C537 is a high-end microcontroller in the Siemens SAB 8051 8-bit microcontroller family. lt is based on the well-known industry standard 8051 architecture; a great
  • 1, 4, 9, 12 1A to 4A data inputs 2, 5, 10, 13 1B to 4B data inputs 3, 6, 8, 11 1Y to 4Y data outputs 7 GND ground (0 V) 14 VCC positive supply voltage Fig.1 Pin configuration. Fig.2 Logic symbol. Fig.3 IEC logic symbol. Rev. A/AH BC807-16/BC807-25/BC807-40 SMD General Purpose Transistor (PNP) www.taitroncomponents.com Page 2 of 5 Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Agilent N4000A, N4001A, N4002A SNS Series Noise Sources 10 MHz to 26.5 GHz Technical Overview Advances in Noise Figure Accuracy N4000A Used for low noise figure devices or devices sensitive to mismatch in the 10 MHz to 18 GHz range N4001A Used for general purpose measurements in the 10 MHz to 18 GHz range N4002A Used for measurements in the Rev. A/AH BC807-16/BC807-25/BC807-40 SMD General Purpose Transistor (PNP) www.taitroncomponents.com Page 2 of 5 Electrical Characteristics (T Ambient=25ºC unless noted otherwise) UNISONIC TECHNOLOGIES CO., LTD 3 of 9 www.unisonic.com.tw QW-R502-088.J ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current ID 50 A Pulsed Drain Current (Note 2) IDM 150 A Avalanche Energy Single Pulsed (Note 3) EAS 205 mJ
  • 8XC51FX PROCESS INFORMATION The 87C51FA/8XC51FB/8XC51FC is manufactured on P629.0, a CHMOS III-E process. Additional pro-cess and reliability information is available in Intel’s Lohnsteuer 2015 formularGoal sheet for employees
  • Sr421sw datasheetsNgb 34 1 continuation sheet for i 130 STD5N52U, STF5N52U N-channel 525 V, 1.25 Ω typ., 4.4 A UltraFASTmesh™ Power MOSFETs in DPAK and TO-220FP packages Datasheet - production data Features TAB 3 1 DPAK 3 2 1 TO-220FP Figure 1. 5C3S Double-anode Rectifier . Name Type Application Cathode type Envelope Mass,g Filament voltage,V Filament current,A Anode voltage,V Anode current,A Socket type Max.reverse anode voltage,kV. 5C3S double-anode rectifier alternative current rectification oxide,direct

                    Tube: File: Tube: File: Tube: File: 12J1L: 6J32B: 6N8S
Tube 25C5 or Röhre 25C5 ID3802, Beam Power Tube, Miniatur-7-Pin-Base B7G, USA 1940 and shown. Radio tubes are valves.
page6/9 version 18/04/07 Health and safety The epoxy resins can be used safely, by respecting certain rules and precautions. The mix resin / hardener is corrosive and can irritate, by contact with the skin, or the eyes.
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  • Entreat me not to leave you ttbb sheetBuzzer circuit using ic 555 datasheetTitle: 5965 6146 Author: Brimar Subject: DPo-FP-2006-04-22 Created Date: 4/22/2006 11:49:49 AM IRFP3710 Transistor Datasheet, IRFP3710 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
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